View BC817N3_4671019.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C906N3 Issued Date : 2003.05.12
Revised Date : Page No. : 1/4
BC817N3
Description
* The BC817N3 is designed for general purpose switching and amplification applications. * Complementary to BC807N3.
Features
* High current (max. 500mA) * Low voltage (max 45V).
Symbol
BC817N3
Outline
SOT-23
BBase CCollector EEmitter
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg Limits 50 45 5 500 1 225 150 -55~+150 Unit V V V mA A mW C C
BC817N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 fT Cob Min. 50 45 5 100 40 100 Typ. 5 Max. 100 100 700 1.2 600 Unit V V V nA nA mV V
Spec. No. : C906N3 Issued Date : 2003.05.12
Revised Date : Page No. : 2/4
Test Conditions IC=10A IC=1mA IE=10A VCE=20V VEB=5V IC=500mA, IB=50mA VCE=1V, IC=500mA VCE=1V, IC=100mA VCE=1V, IC=500mA VCE=5V, IC=10mA, f=100MHz VCB=10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width 380s, Duty Cycle2%
MHz pF
Classification of hFE 1:
Rank Range 16 100--250 25 160--400 40 250--600
BC817N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current 1000 Saturation Voltage-(mV) 1000
Spec. No. : C906N3 Issued Date : 2003.05.12
Revised Date : Page No. : 3/4
Saturation Voltage vs Collector Current
VCE(SAT)@IC=10IB Current Gain---HFE
VCE=10V
100 VCE=1V
100
10 0.1 1 10 100 1000 Collector Current---IC(mA)
10 0.1 1 10 100 1000 Collector Current---IC(mA)
Saturation Voltage vs Collector Current
Power Derating Curve
250
10000
VBE(SAT)@IC=10IB
Power Dissipation---PD (mW)
Saturation Voltage-(mV)
200
150
1000
100
50
100 0.1 1 10 100 1000 Collector Current---IC(mA)
0 0 50 100 150 Ambient Temperature---TA( )
BC817N3
CYStek Product Specification
CYStech Electronics Corp.
SOT-23 Dimension
Spec. No. : C906N3 Issued Date : 2003.05.12
Revised Date : Page No. : 4/4
A L 3 B 1 2 S
Marking:
TE 8F
V
G
C D K
3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Base 2.Emitter 3.Collector
H J
*: Typical
DIM A B C D G H
Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040
Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10
DIM J K L S V
Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256
Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65
Notes: 1Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BC817N3
CYStek Product Specification

▲Up To Search▲

Price & Availability of BC817N3

	To Download BC817N3 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .